英商劍橋氮化鎵器件有限公司-高效電源暨寬能隙技術應用論壇

英商劍橋氮化鎵器件有限公司

Cambridge GaN Devices

由英國劍橋大學分立出來的 Cambridge GaN Devices (簡稱 CGD)，是一家無晶圓廠半導體公司，致力於開發一系列基於 GaN 的節能功率裝置，以實現更環保的電子產品。
業界首創、易於使用的增強模式 GaN 積體電路增強模式 GaN：具有最先進靜態和動態性能的新型平台，可增加內部閘極端子的易用性和智慧溫度控制，進而提高閘極可靠性。與其他現有GaN 裝置不同，我們的智慧型 ICeGaN™ 電晶體可與標準矽閘極驅動器搭配工作，且無需負電壓關斷，因此不必配置外部、昂貴的驅動和箝位介面。最後GaN 功率電晶體的工作方式與 MOSFET 大致相同。節能50% 以上。
隨著全球電氣化快速發展，對高效和創新解決方案的需求也與日俱增。與最先進的矽元件相比，ICeGaN™ 功率元件可在更高的開關頻率下工作，具有更低的損耗和導通電阻，還可提供更高性能，同時將節能效果提高 50%。體積縮小至兩倍以上
GaN 電晶體可輕鬆地以更高頻率運行許多電路拓撲，同時仍能實現極高能效，從而使許多應用變得更小、更輕。CGD 的 ICeGaN™ 可將多個特性整合至增強型 GaN 電晶體，運行溫度更低，可靠性更高，與矽相比，GaN 具有可以實現前所未有的功率密度的優勢。

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CGD65C025SP2

P2 series 650 V / 25 mΩ GaN HEMT with ICeGaN™ Gate CGD65C025SP2 is a 650 V power transistor utilising the superior material attributes of enhancement mode normally-off GaN-on-Si for high power applications, delivering high current, impressive breakdown voltage, and high switching frequency. Central to its design is CGD's hallmark ICeGaN gate technology which provides a wide 9-20 V gate drive voltage, a 3 V threshold voltage, genuine 0 V turn off, and fast turn-on time for high frequency operation and easy paralleling. This ensures compatibility with almost all available Si/SiC MOSFET and IGBT gate drivers.

Presented in a thermally optimised and compact 10x10 mm² SMD package with wettable flanks, this power transistor is tailored for bottom side cooling and superior thermal resistance, making it ideal for multi-kW applications with demanding performance criteria.

CGD65D025SP2

P2 series 650 V / 25 mΩ GaN HEMT with ICeGaN™ Gate and Dual Gate Pinout CGD65D025SP2 is a 650 V power transistor utilising the superior material attributes of enhancement mode normally-off GaN-on-Si for high power applications, delivering high current, impressive breakdown voltage, and high switching frequency. Central to its design is CGD's hallmark ICeGaN gate technology which provides a wide 9-20 V gate drive voltage, a 3 V threshold voltage, genuine 0 V turn off, and fast turn-on time for high frequency operation and easy paralleling. This ensures compatibility with almost all available Si MOSFET, SiC and IGBT gate drivers.

The dual gate pinout design allows for easy paralleling and versatile PCB design. Presented in a thermally optimized 10x10 mm² SMD package with wettable flanks, this 25 mΩ GaN power transistor is optimized for dual side cooling and superior thermal resistance, making it ideal for multi-kW applications with demanding performance criteria.

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