瑞能半導體
WeEn Semiconductors Co., Ltd
Established in 2015, WeEn Semiconductors is a global leader in the semiconductor industry, headquartered in Shanghai. In 2018, we marked a significant milestone with the inauguration of a state-of-the-art reliability and failure analysis laboratory in Nanchang, China.
With over 50 years of heritage in semiconductor development, WeEn focuses on delivering a comprehensive portfolio of industry-leading power products, from Silicon Carbide Power Devices to IGBTs and modules. Our products cater to diverse markets such as telecommunications, computers, consumer electronics, automotive, and power management.
At WeEn, we empower our customers by enhancing cost efficiency and production efficacy, contributing to the global advancement of intelligent manufacturing. Our mission is rooted in innovation, ensuring we stay ahead of industry demands and shape the future of semiconductor technology.
產品展示
WNSC2M45065B7
WeEn's Gen-2 650V 45mR D2PAK-7L SiC MOS, featured with wide Vgs range -10V~22V, Rdson@18Vgs=33mΩ, advanced Ag-sintering package technology offers very low thermal impedance of only 0.31k/W, intentional Crss/Ciss ratio design for better EMC performance. This part is suitable for high efficiency PFC, motor drivers, EV charger, energy storage systems and UPS systems.
WeEn’s Gen-2 SiC MOSFET is focusing on gate oxide quality and power density, which has passed full-scale strict reliability test, keep on improving the wafer process and package technology to maximize the advantages of SiC.
About WeEn Gen-2 SiC MOSFET platform:
+ Offering super broad product portfolio, 650V/1200V/1700V platform and Rdson 12mΩ~1Ω available.
+ Various package type choices, TO247 / D2PAK / TOLL / TOLT(TSC) / TSPAK(TSC)
+ 15V gate voltage drivable character and 18V recommend operational Vgs condition ,
+ High reliability, high quality, high stability.
+ Extremely low Ron,sp offers high power density.
WeEn's Gen-6 650V 16A inner isolation IITO220 SiC Schottky Barrier Diode, featured with super low 1.26V Vf, and extremely low thermal impedance, Rthj-mb=1.8K/W, don't need additional isolation sheet which will save assembly time. This device could be easily adopted in high efficiency PFC circuit and booster DC-DC structure, very suitable for PC/Telecom/server/data center PSU, ESS system, and UPS systems.
About WeEn Gen-6 650V SiC SBD platform:
+ Vast 650V SiC SBD product portfolio covers 1A~40A current range
+ Various package options, TO220 / TO247 / DPAK / D2PAK / DFN8*8/ SMB / SOD123 / TOLT(TSC) / TSPAK(TSC)
+ High temperature tolerance, TJMAX=175℃.
